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techLOWJP2026-05-06 19:49 UTC

High-NA EU Lithography: Extending The STCC Formula (Science Tokyo)

A new technical paper, “Source-position-dependent transmission cross coefficient formula including polarization and mask three-dimensional effects in high-numerical-aperture extreme ultraviolet lithography” was published by researchers at Institute of Science Tokyo. This work is based on the paper p

ORIGINAL SOURCE →via Semiconductor Engineering
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