Understanding Why Drain-Current in GAAFETs Deviates from Thermionic Dependence at Negative Gate Voltages (Sandia National Lab, LIST)

A new technical paper, “Gate-Drain Leakage Enhanced by Drain-Induced Dielectric Barrier Lowering in Gate-All-Around Field Effect Transistors,” was published by researchers at Sandia National Laboratories and Luxembourg Institute of Science and Technology. Abstract “Gate-All-Around Field-Effect Trans